Toshiba Unveils 1200V Trench-gate SiC MOSFET For AI Data Centres
Tokyo: Toshiba Electronic Devices and Storage Corporation (Toshiba) has started shipping test samples of ‘TW007D120E’, a 1200-volt (V) trench-gate silicon carbide (SiC) MOSFET designed for power supply systems in next-generation artificial intelligenc…