Toshiba Unveils New 650V SiC MOSFETs in Compact DFN8x8 Design
Tokyo: Toshiba Electronic Devices and Storage Corporation has announced the launch of four new 650V silicon carbide (SiC) MOSFETs, featuring its latest 3rd generation SiC MOSFET chips. These devices are housed in the compact DFN8x8 package, which is particularly suitable