Tokyo: Toshiba Electronic Devices and Storage Corporation has announced the launch of four new 650V silicon carbide (SiC) MOSFETs, featuring its latest 3rd generation SiC MOSFET chips. These devices are housed in the compact DFN8x8 package, which is particularly suitable for use in industrial equipment, including switched-mode power supplies and power conditioners for photovoltaic generators. Volume shipments of these devices, namely ‘TW031V65C,’ ‘TW054V65C,’ ‘TW092V65C,’ and ‘TW123V65C,’ have commenced.

According to BERNAMA News Agency, these newly launched products are the first of their kind to employ the small surface-mount DFN8x8 package. This design significantly reduces the package volume by more than 90% when compared to traditional lead-inserted packages like TO-247 and TO-247-4L(X), thereby enhancing the power density of equipment. The surface mounting capability also enables the use of smaller parasitic impedance components, which helps in minimizing switching losses.

The DFN8x8 package, being a 4-pin design, allows for the use of a Kelvin connection of its signal source terminal for the gate drive. This configuration reduces the impact of inductance within the source wire of the package, enabling high-speed switching performance. Specifically, for the TW054V65C model, it reduces turn-on loss by approximately 55% and turn-off loss by around 25% compared to Toshiba’s current offerings, which contributes to reducing power loss in equipment.