Tokyo: Toshiba Electronic Devices and Storage Corporation (Toshiba) has launched four 650-volt (V) silicon carbide (SiC) MOSFETs, equipped with its latest third-generation SiC MOSFET chips and housed in a compact DFN8x8 package. Suitable for industrial equipment, such as switched-mode power supplies and power conditioners for photovoltaic generators, volume shipments of the four devices, ‘TW031V65C’, ‘TW054V65C’, ‘TW092V65C’ and ‘TW123V65C’, have started.

According to BERNAMA News Agency, the new products are the first third-generation SiC MOSFETs to use the small surface-mount DFN8x8 package, which reduces volume by over 90 per cent compared to lead-inserted packages and improves equipment power density. Surface mounting also allows use of parasitic impedance components smaller than those of lead-inserted packages, reducing switching losses.

The DFN8x8 is a four-pin package, allowing use of a Kelvin connection of its signal source terminal for the gate drive. This reduces the influence of inductance in the source wire within the package, achieving high-speed switching performance. In the case of TW054V65C, it reduces turn-on loss by approximately 55 per cent and turn-off loss by approximately 25 per cent compared to current Toshiba products, helping to reduce power loss in equipment. A supplier of advanced semiconductor and storage solutions, Toshiba will continue to expand its lineup to contribute to improved equipment efficiency and increased power capacity.