Tokyo: Kioxia Corporation, a leader in memory solutions, has announced the sampling of its new Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices utilizing 4-bit-per-cell, quadruple-level cell (QLC) technology. These devices are tailored for read-intensive applications and high-capacity storage requirements and are driven by Kioxia's 8th generation BiCS FLASH 3D flash memory technology.

According to BERNAMA News Agency, the QLC UFS technology offers higher bit density compared to traditional TLC UFS. This makes it particularly suitable for mobile applications demanding enhanced storage capacities. Advances in controller technology and error correction have facilitated QLC technology to achieve this increased storage capacity while maintaining competitive performance levels.