Kuala lumpur: Kioxia Corporation, a global leader in memory solutions, has announced the sampling of its latest Universal Flash Storage (UFS) Ver. 4.1 embedded memory devices, highlighting its continued leadership in high-performance storage solutions.

According to BERNAMA News Agency, these new devices are engineered to cater to the demands of next-generation mobile applications, including advanced smartphones equipped with on-device artificial intelligence (AI). The devices promise improved performance and greater power efficiency within a compact BGA package.

The UFS 4.1 lineup features Kioxia’s eighth-generation BiCS FLASH 3D flash memory and a controller, all housed in a JEDEC-standard package. This generation marks the introduction of CMOS directly Bonded to Array (CBA) technology, an innovative architecture that enhances performance, density, and energy efficiency by directly bonding CMOS circuitry to the memory array.

Available in 256 gigabytes (GB), 512 GB, and one terabyte (TB) variants, the new devices offer significant advancements over their predecessors. They boast up to 30 percent faster random write performance and 45 percent faster random read speeds. Power efficiency has been improved, with write operations enhanced by up to 20 percent and read operations by 15 percent.

Key features such as Host Initiated Defragmentation ensure sustained performance during demanding tasks, while WriteBooster buffer resizing offers more flexible and optimised data throughput. The one TB model also features a reduced package height, facilitating more compact integration in mobile devices.

These advancements position Kioxia’s UFS 4.1 memory as a vital component for premium mobile user experiences, supporting faster downloads, smoother multitasking, and more efficient AI processing.